The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.

本文言語English
ホスト出版物のタイトル2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ページ524-529
ページ数6
ISBN(電子版)9781509027248
DOI
出版ステータスPublished - 2016 11 18
イベント43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
継続期間: 2016 6 52016 6 10

出版物シリーズ

名前Conference Record of the IEEE Photovoltaic Specialists Conference
2016-November
ISSN(印刷版)0160-8371

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
国/地域United States
CityPortland
Period16/6/516/6/10

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 産業および生産工学
  • 電子工学および電気工学

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