The Growth of CuGaTe2 Thin Films by Two-Step Closed Space Sublimation

Aya Uruno*, Masakazu Kobayashi

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

CuGaTe2 layers are successfully grown on Si (001) and Mo/quartz substrates using two-step closed space sublimation (CSS). The surface morphology of the Cu2Te first layer is affected by the surface free energy of the different substrates. Cu2Te grown on Si (001) comprises hexagonal islands which are highly oriented to the (0001). Conversely, Cu2Te layers formed on Mo/quartz substrates forms a thin film. The surface morphology and the quality of the crystals in the CuGaTe2 layers are investigated. Overgrowth by CuGaTe2 of the Cu2Te islands on Si substrates is confined to the islands only and there is no nucleation on the bare substrate. On the contrary, overgrowth by CuGaTe2 on the continuous Cu2Te films on Mo/quartz substrates produces continuous thin films. Therefore, the surface morphology of the CuGaTe2 layers can be controlled by changing the substrate material because they have different surface free energies.

本文言語English
論文番号1800883
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
216
15
DOI
出版ステータスPublished - 2019 8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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