The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures

Taizo Nakasu; T. Kizu; W. Sun; F. Kazami; Masakazu Kobayashi; T. Asahi

doi:10.1109/ICIPRM.2016.7528603

The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures

Taizo Nakasu, T. Kizu, W. Sun, F. Kazami, Masakazu Kobayashi, T. Asahi

研究成果: Conference contribution

抄録

ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was studied by means of XRD pole figure and PL measurements. It was confirmed that (331)-plane ZnTe layer was formed on the m-plane sapphire substrate with nano-faceted structure and the ZnTe epilayer grown of the nano-facet structure exhibited the single domain structure with high optical properties.

本文言語	English
ホスト出版物のタイトル	2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子版）	9781509019649
DOI	https://doi.org/10.1109/ICIPRM.2016.7528603
出版ステータス	Published - 2016 8月 1
イベント	2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan 継続期間: 2016 6月 26 → 2016 6月 30

Other

Other	2016 Compound Semiconductor Week, CSW 2016
国/地域	Japan
City	Toyama
Period	16/6/26 → 16/6/30

ASJC Scopus subject areas

電子工学および電気工学
電子材料、光学材料、および磁性材料

文献へのアクセス

10.1109/ICIPRM.2016.7528603

他のファイルとリンク

引用スタイル

Nakasu, T., Kizu, T., Sun, W., Kazami, F., Kobayashi, M., & Asahi, T. (2016). The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 [7528603] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2016.7528603

The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. / Nakasu, Taizo; Kizu, T.; Sun, W. その他.

2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7528603.

研究成果: Conference contribution

Nakasu, T, Kizu, T, Sun, W, Kazami, F, Kobayashi, M & Asahi, T 2016, The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. in 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016., 7528603, Institute of Electrical and Electronics Engineers Inc., 2016 Compound Semiconductor Week, CSW 2016, Toyama, Japan, 16/6/26. https://doi.org/10.1109/ICIPRM.2016.7528603

Nakasu T, Kizu T, Sun W, Kazami F, Kobayashi M, Asahi T. The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7528603 doi: 10.1109/ICIPRM.2016.7528603

Nakasu, Taizo ; Kizu, T. ; Sun, W. その他. / The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016.

@inproceedings{40955f9f377640a189c735ffa04358a0,

title = "The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures",

abstract = "ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was studied by means of XRD pole figure and PL measurements. It was confirmed that (331)-plane ZnTe layer was formed on the m-plane sapphire substrate with nano-faceted structure and the ZnTe epilayer grown of the nano-facet structure exhibited the single domain structure with high optical properties.",

keywords = "molecular beam epitaxy, nano-facet structure, sapphire, zinc telluride",

author = "Taizo Nakasu and T. Kizu and W. Sun and F. Kazami and Masakazu Kobayashi and T. Asahi",

year = "2016",

month = aug,

day = "1",

doi = "10.1109/ICIPRM.2016.7528603",

language = "English",

booktitle = "2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "2016 Compound Semiconductor Week, CSW 2016 ; Conference date: 26-06-2016 Through 30-06-2016",

}

TY - GEN

T1 - The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures

AU - Nakasu, Taizo

AU - Kizu, T.

AU - Sun, W.

AU - Kazami, F.

AU - Kobayashi, Masakazu

AU - Asahi, T.

PY - 2016/8/1

Y1 - 2016/8/1

N2 - ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was studied by means of XRD pole figure and PL measurements. It was confirmed that (331)-plane ZnTe layer was formed on the m-plane sapphire substrate with nano-faceted structure and the ZnTe epilayer grown of the nano-facet structure exhibited the single domain structure with high optical properties.

AB - ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was studied by means of XRD pole figure and PL measurements. It was confirmed that (331)-plane ZnTe layer was formed on the m-plane sapphire substrate with nano-faceted structure and the ZnTe epilayer grown of the nano-facet structure exhibited the single domain structure with high optical properties.

KW - molecular beam epitaxy

KW - nano-facet structure

KW - sapphire

KW - zinc telluride

UR - http://www.scopus.com/inward/record.url?scp=84992027551&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84992027551&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.2016.7528603

DO - 10.1109/ICIPRM.2016.7528603

M3 - Conference contribution

AN - SCOPUS:84992027551

BT - 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 Compound Semiconductor Week, CSW 2016

Y2 - 26 June 2016 through 30 June 2016

ER -

The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures

抄録

Other

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル