抄録
ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was studied by means of XRD pole figure and PL measurements. It was confirmed that (331)-plane ZnTe layer was formed on the m-plane sapphire substrate with nano-faceted structure and the ZnTe epilayer grown of the nano-facet structure exhibited the single domain structure with high optical properties.
本文言語 | English |
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ホスト出版物のタイトル | 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 |
出版社 | Institute of Electrical and Electronics Engineers Inc. |
ISBN(電子版) | 9781509019649 |
DOI | |
出版ステータス | Published - 2016 8月 1 |
イベント | 2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan 継続期間: 2016 6月 26 → 2016 6月 30 |
Other
Other | 2016 Compound Semiconductor Week, CSW 2016 |
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国/地域 | Japan |
City | Toyama |
Period | 16/6/26 → 16/6/30 |
ASJC Scopus subject areas
- 電子工学および電気工学
- 電子材料、光学材料、および磁性材料