The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures

Taizo Nakasu, T. Kizu, W. Sun, F. Kazami, Masakazu Kobayashi, T. Asahi

    研究成果: Conference contribution

    抄録

    ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was studied by means of XRD pole figure and PL measurements. It was confirmed that (331)-plane ZnTe layer was formed on the m-plane sapphire substrate with nano-faceted structure and the ZnTe epilayer grown of the nano-facet structure exhibited the single domain structure with high optical properties.

    本文言語English
    ホスト出版物のタイトル2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
    出版社Institute of Electrical and Electronics Engineers Inc.
    ISBN(電子版)9781509019649
    DOI
    出版ステータスPublished - 2016 8 1
    イベント2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
    継続期間: 2016 6 262016 6 30

    Other

    Other2016 Compound Semiconductor Week, CSW 2016
    CountryJapan
    CityToyama
    Period16/6/2616/6/30

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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