The impact of nitrogen implantation into highly doped polysilicon gates for highly reliable and high-performance sub-quarter-micron dual-gate complementary metal oxide semiconductor

Takashi Kuroi, Maiko Kobayashi, Masayoshi Shirahata, Yoshiki Okumura, Shigeru Kusunoki, Masahide Inuishi, Natsuro Tsubouchi

研究成果: Article査読

16 被引用数 (Scopus)

抄録

We studied the effects of nitrogen implantation into highly doped polysilicon gates in detail. It was found that highly arsenic-doped polysilicon gates caused degradation of gate oxide films and highly boron-doped polysilicon gates resulted in a shift of threshold voltage by boron penetration. Nitrogen implantation into polysilicon gates can effectively overcome these problems. The nitrogen implanted into the polysilicon gate is segregated into the gate oxide film during heat treatment after implantation. The nitrogen in the gate oxide film can act as a barrier layer for boron penetration and reduce the random failures of gate oxide films under highly doped polysilicon gates. Moreover, the hot carrier resistance can also be improved by nitrogen implantation. Highly reliable and high-performance dual-gate Complementary metal oxide semiconductor (CMOS) can be realized by the highly doped gate and the nitrogen implantation technique.

本文言語English
ページ(範囲)771-775
ページ数5
ジャーナルJapanese journal of applied physics
34
2S
DOI
出版ステータスPublished - 1995 2月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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