The impact of nitrogen implantation into highly doped polysilicon gates for highly reliable and high-performance sub-quarter-micron dual-gate complementary metal oxide semiconductor

Takashi Kuroi, Maiko Kobayashi, Masayoshi Shirahata, Yoshiki Okumura, Shigeru Kusunoki, Masahide Inuishi, Natsuro Tsubouchi

研究成果: Article査読

16 被引用数 (Scopus)

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Engineering & Materials Science

Physics & Astronomy