The impact of nitrogen implantation into highly doped polysilicon gates for highly reliable and high-performance sub-quarter-micron dual-gate complementary metal oxide semiconductor
Takashi Kuroi, Maiko Kobayashi, Masayoshi Shirahata, Yoshiki Okumura, Shigeru Kusunoki, Masahide Inuishi, Natsuro Tsubouchi
研究成果: Article › 査読
16
被引用数
(Scopus)