The influence of low-temperature annealing on the physical properties of bi2sr2cacu2cl y thin films

Y. Shinma, Takayuki Sota, K. Suzuki

    研究成果: Article査読

    抄録

    We have studied the low-temperature annealing effect on the physical properties of Bi2Sr2CaCu2Ov thin films deposited on a MgO(lOO) substrate by rf magnetron sputtering. It is found that the characteristics of the films depend strongly on the oxygen partial pressure during re-annealing at 470°C after high-temperature annealing at 770°C in air. Tcand p at 300 K abruptly change for less than 20% oxygen partial pressure. A peak shift of the Bi4f core level spectrum is also observed at 0% oxygen partial pressure in an XPS measurement, which is due to the change in the ligand of the Bi atom.

    本文言語English
    ページ(範囲)79-83
    ページ数5
    ジャーナルPhase Transitions
    42
    1-2
    DOI
    出版ステータスPublished - 1993 1 1

    ASJC Scopus subject areas

    • 材料科学(全般)
    • 器械工学

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