The integration of Gaon SiC at room temperature by surface activated bonding method

Yang Xu, Fengwen Mu, Yinghui Wang, Dapeng Chen, Tadatomo Suga

研究成果: Conference contribution

抄録

The integration of Gaon SiC is a promising method to reduce the self-heating of Ga-based devices. The bonding with an average bonding energy of \sim 2.31\mathrm {J} /\mathrm {m}^{\mathbf {2}} was achieved by surface activated bonding (SAB) using a Si-containing Ar ion beam at room temperature. The high-resolution STEM analysis was carried out to investigate the bonding mechanism. The analysis indicate \mathrm {a}\sim 2.2 nm amorphous SiC layer and \sim 1.8 nm amorphous Galayer with a slight diffusion at the interface, which should contributes the strong bonding. Same analyses were applied on the 473 K-annealed bonding interface and indicate that the interfacial layer shrank by \sim 0.5 nm after annealing, which may due to the further diffusion of Ga and Si.

本文言語English
ホスト出版物のタイトルProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ数1
ISBN(電子版)9784904743072
DOI
出版ステータスPublished - 2019 5 1
イベント6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
継続期間: 2019 5 212019 5 25

出版物シリーズ

名前Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
国/地域Japan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

ASJC Scopus subject areas

  • プロセス化学およびプロセス工学
  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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