The charge versus applied voltage (Q-V) characteristics of a thin-film electroluminescent (TFEL) device with an Al/SiO2/Ta2O5/ZnS/Ta2O5/ITO/Glass structure are investigated. The results for a stacked insulating layer TFEL device are summarized as follows. The maximum charge (Qmax) of the TFEL device is determined by the highest Qmax of insulators. The SiO2 insulating layer used in this study shows that the dielectric avalanche breakdown and the electric field of the film is clamped in the region above its own breakdown field strength under current conditions limited by the Ta2O5 insulating layers. The TFEL device shows a hexagonal Q-V loop in high electric fields.
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