TY - JOUR
T1 - The striking influence of rapid thermal annealing on InGaAsP grown by MBE
T2 - material and photovoltaic device
AU - Ji, Lian
AU - Tan, Ming
AU - Ding, Chao
AU - Honda, Kazuki
AU - Harasawa, Ryo
AU - Yasue, Yuya
AU - Wu, Yuanyuan
AU - Dai, Pan
AU - Tackeuchi, Atsushi
AU - Bian, Lifeng
AU - Lu, Shulong
AU - Yang, Hui
N1 - Funding Information:
The authors would like to thank Naoki Yamamoto and Hao Wu of Waseda University for their help in the TRPL measurements. This work is supported in part by the National Natural Science Foundation of China (Grant Nos. 61404157 , 61534008 and 61376081 ), the Natural Science Foundation of Jiangsu Province (Grant Nos. BK20151455 ), the Application Foundation of Suzhou (Grant Nos. SYG201437 ).
Publisher Copyright:
© 2016 Elsevier B.V.
PY - 2017/1/15
Y1 - 2017/1/15
N2 - Rapid thermal annealing (RTA) has been performed on InGaAsP solar cells with the bandgap energy of 1 eV grown by molecular beam epitaxy. With the employment of RTA under an optimized condition, the open voltage was increased from 0.45 to 0.5 V and the photoelectric conversion efficiency was increased from 11.87–13.2%, respectively, which was attributed to the crystal quality improvement of p-type InGaAsP and therefore a reduced recombination current inside depletion region. The integral photoluminescence (PL) intensity of p-type InGaAsP increased to 166 times after annealing at 800 °C and its PL decay time increased by one order of magnitude. While the changes of nominally undoped and n-doped InGaAsP were negligible. The different behaviors of the effect of RTA on InGaAsP of different doping types were attributed to the highly mobile “activator” – beryllium (Be) atom in p-type InGaAsP.
AB - Rapid thermal annealing (RTA) has been performed on InGaAsP solar cells with the bandgap energy of 1 eV grown by molecular beam epitaxy. With the employment of RTA under an optimized condition, the open voltage was increased from 0.45 to 0.5 V and the photoelectric conversion efficiency was increased from 11.87–13.2%, respectively, which was attributed to the crystal quality improvement of p-type InGaAsP and therefore a reduced recombination current inside depletion region. The integral photoluminescence (PL) intensity of p-type InGaAsP increased to 166 times after annealing at 800 °C and its PL decay time increased by one order of magnitude. While the changes of nominally undoped and n-doped InGaAsP were negligible. The different behaviors of the effect of RTA on InGaAsP of different doping types were attributed to the highly mobile “activator” – beryllium (Be) atom in p-type InGaAsP.
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting III-V materials
KW - B3. Solar cells
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U2 - 10.1016/j.jcrysgro.2016.11.003
DO - 10.1016/j.jcrysgro.2016.11.003
M3 - Article
AN - SCOPUS:84999788898
SN - 0022-0248
VL - 458
SP - 110
EP - 114
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -
