The structure control of sputtered TaN films on SiO 2 through the study of evolutionary selection growth

Kun Tepsanongsuk, Suguru Noda, Yoshiko Tsuji, Hiroshi Komiyama

研究成果: Conference contribution

抄録

The growth mechanism of TaN films deposited by r.f. magnetron sputtering on SiO 2 was studied. At the initial stage, a TaN film about 30 nm thick is randomly orientated. With increasing film thickness to about 100 nm, the film has (111) orientation. The film orientation then changes into (200), which has kinetic stability on 4% N 2 / (N 2+Ar) flow ratio. This phenomenon is explained by "Evolutionary selection", where only a few favored orientations with nearly maximum vertical growth rate will remain in the final stage and all other orientations will gradually disappear.

元の言語English
ホスト出版物のタイトルAdvanced Metallization Conference (AMC)
編集者D. Edelstein, G. Dixit, Y. Yasuda, T. Ohba
ページ409-412
ページ数4
出版物ステータスPublished - 2000
外部発表Yes
イベントAdvanced Metallization Conference 2000 - San Diego, CA, United States
継続期間: 2000 10 22000 10 4

Other

OtherAdvanced Metallization Conference 2000
United States
San Diego, CA
期間00/10/200/10/4

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Magnetron sputtering
Film thickness
Kinetics

ASJC Scopus subject areas

  • Chemical Engineering(all)

これを引用

Tepsanongsuk, K., Noda, S., Tsuji, Y., & Komiyama, H. (2000). The structure control of sputtered TaN films on SiO 2 through the study of evolutionary selection growth : D. Edelstein, G. Dixit, Y. Yasuda, & T. Ohba (版), Advanced Metallization Conference (AMC) (pp. 409-412)

The structure control of sputtered TaN films on SiO 2 through the study of evolutionary selection growth . / Tepsanongsuk, Kun; Noda, Suguru; Tsuji, Yoshiko; Komiyama, Hiroshi.

Advanced Metallization Conference (AMC). 版 / D. Edelstein; G. Dixit; Y. Yasuda; T. Ohba. 2000. p. 409-412.

研究成果: Conference contribution

Tepsanongsuk, K, Noda, S, Tsuji, Y & Komiyama, H 2000, The structure control of sputtered TaN films on SiO 2 through the study of evolutionary selection growth : D Edelstein, G Dixit, Y Yasuda & T Ohba (版), Advanced Metallization Conference (AMC). pp. 409-412, Advanced Metallization Conference 2000, San Diego, CA, United States, 00/10/2.
Tepsanongsuk K, Noda S, Tsuji Y, Komiyama H. The structure control of sputtered TaN films on SiO 2 through the study of evolutionary selection growth : Edelstein D, Dixit G, Yasuda Y, Ohba T, 編集者, Advanced Metallization Conference (AMC). 2000. p. 409-412
Tepsanongsuk, Kun ; Noda, Suguru ; Tsuji, Yoshiko ; Komiyama, Hiroshi. / The structure control of sputtered TaN films on SiO 2 through the study of evolutionary selection growth Advanced Metallization Conference (AMC). 編集者 / D. Edelstein ; G. Dixit ; Y. Yasuda ; T. Ohba. 2000. pp. 409-412
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