The structure control of sputtered TaN films on SiO2 through the study of evolutionary selection growth

Kun Tepsanongsuk, Suguru Noda, Yoshiko Tsuji, Hiroshi Komiyama

研究成果: Conference article査読

抄録

The growth mechanism of TaN films deposited by r.f. magnetron sputtering on SiO2 was studied. At the initial stage, a TaN film about 30 nm thick is randomly orientated. With increasing film thickness to about 100 nm, the film has (111) orientation. The film orientation then changes into (200), which has kinetic stability on 4% N2 / (N2+Ar) flow ratio. This phenomenon is explained by "Evolutionary selection", where only a few favored orientations with nearly maximum vertical growth rate will remain in the final stage and all other orientations will gradually disappear.

本文言語English
ページ(範囲)409-412
ページ数4
ジャーナルAdvanced Metallization Conference (AMC)
出版ステータスPublished - 2000 12 1
外部発表はい
イベントAdvanced Metallization Conference 2000 - San Diego, CA, United States
継続期間: 2000 10 22000 10 4

ASJC Scopus subject areas

  • 化学工学(全般)

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