Theoretical design of ZnSSe/ZnCdSSe laser diodes emitting 460 nm at room temperature (RT) was studied by means of threshold current analysis. The threshold current density calculation was based on the laser theoryestablished for the III-V laser diode (LD) system. The result of the threshold current density calculation indicatedthat the reduction of carrier overflow is an essential issue in realizing the device with a reasonable threshold currentlevel at RT. Another indication is that 30% S content in the ZnSSe cladding layer would be a suitable targetvalue for a practical 460 nm LD at RT, along with a multiple quantum barrier structure. The predicted thresholdcurrent density of such a LD could be as low as 450 A/cm2 at RT.
ASJC Scopus subject areas