Theoretical design of 460 nm zncdsse laser diodes

Wataru Imajuku, Masashi Takahashi, Masakazu Kobayash, Akihiko Yoshikawa

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Theoretical design of ZnSSe/ZnCdSSe laser diodes emitting 460 nm at room temperature (RT) was studied by means of threshold current analysis. The threshold current density calculation was based on the laser theoryestablished for the III-V laser diode (LD) system. The result of the threshold current density calculation indicatedthat the reduction of carrier overflow is an essential issue in realizing the device with a reasonable threshold currentlevel at RT. Another indication is that 30% S content in the ZnSSe cladding layer would be a suitable targetvalue for a practical 460 nm LD at RT, along with a multiple quantum barrier structure. The predicted thresholdcurrent density of such a LD could be as low as 450 A/cm2 at RT.

本文言語English
ページ(範囲)1861-1866
ページ数6
ジャーナルJapanese journal of applied physics
34
4R
DOI
出版ステータスPublished - 1995 4
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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