Theoretical investigation of the breakdown electric field of SiC polymorphs

Kikou Yamaguchi, Daisuke Kobayashi, Tomoyuki Yamamoto, Kazuyuki Hirose

    研究成果: Article査読

    1 被引用数 (Scopus)

    抄録

    The breakdown electric field of several SiC polymorphs has been investigated theoretically using a concept of "recovery rate," which is obtained by first principles calculations. A good relationship between the experimental breakdown electric fields and the calculated recovery rate of 4H-, 6H-, and 3C-SiC was obtained. In order to examine the stability of SiC polymorphs, the total electronic energies of various types of SiC crystal structures were calculated. Here, two candidates of polymorphs-GeS-type- and 2H-SiC-with energies comparable to those of experimentally well-established structures, have been obtained. The breakdown electric fields of these two polymorphs were estimated using a relationship obtained from the results of 4H-, 6H-, and 3C-SiC. This indicates that one of these polymorphs, GeS-type-SiC, has higher breakdown electric field than any other SiC polymorphs. In addition to the investigation with the recovery rate, relationship between experimental breakdown electric field and calculated band gap with recently developed accurate electron-correlation potential has been also discussed.

    本文言語English
    ジャーナルPhysica B: Condensed Matter
    DOI
    出版ステータスAccepted/In press - 2016 12 15

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 電子工学および電気工学

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