Theoretical investigation on the formation process of the stacking-fault triangle in the Si(111)-7 x 7 structure

T. Hoshino, N. Kamijou, H. Fujiwara, Takanobu Watanabe, I. Ohdomari

研究成果: Article

6 引用 (Scopus)

抄録

The formation process of stacking-fault (SF) triangles during the Si(111) 1 x 1→7 x 7 reconstruction has been studied using the quantum chemical theoretical calculations. On the basis of the propagation and subsequent merging mechanism of the SF areas proposed by one of authors (I.O.), several reaction paths to complete a single SF triangle have been examined. The most probable formation process of SF triangles has been determined from the their lowest energy reaction path. A comparison of total energy changes along the SF triangle formation both with and without oxygen atoms indicated a preference of oxygen incorporation in the formation of 7 x 7 dimer-stacking-fault (DS) structure, which was compatible with the recent experimental results suggesting the important role of oxygen in the 7 x 7 reconstruction. The effect of the step edge has also been discussed.

元の言語English
ページ(範囲)119-128
ページ数10
ジャーナルSurface Science
394
発行部数1-3
出版物ステータスPublished - 1997 12 19
外部発表Yes

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Stacking faults
triangles
crystal defects
Oxygen
oxygen
Merging
Dimers
oxygen atoms
dimers
Atoms
propagation
energy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

これを引用

Theoretical investigation on the formation process of the stacking-fault triangle in the Si(111)-7 x 7 structure. / Hoshino, T.; Kamijou, N.; Fujiwara, H.; Watanabe, Takanobu; Ohdomari, I.

:: Surface Science, 巻 394, 番号 1-3, 19.12.1997, p. 119-128.

研究成果: Article

Hoshino, T, Kamijou, N, Fujiwara, H, Watanabe, T & Ohdomari, I 1997, 'Theoretical investigation on the formation process of the stacking-fault triangle in the Si(111)-7 x 7 structure', Surface Science, 巻. 394, 番号 1-3, pp. 119-128.
Hoshino, T. ; Kamijou, N. ; Fujiwara, H. ; Watanabe, Takanobu ; Ohdomari, I. / Theoretical investigation on the formation process of the stacking-fault triangle in the Si(111)-7 x 7 structure. :: Surface Science. 1997 ; 巻 394, 番号 1-3. pp. 119-128.
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