抄録
The planarity of the aromatic stage of two-dimensional Si and Ge layers are theoretically investigated by first-principles total-energy calculations. While a C atom prefers to form the flat aromatic stage, i.e., graphite, Si and Ge prefer to form the corrugated aromatic stage. Si can be said to be the critical element by which the corrugated stage is formed.
本文言語 | English |
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ページ(範囲) | 14916-14922 |
ページ数 | 7 |
ジャーナル | Physical Review B |
巻 | 50 |
号 | 20 |
DOI | |
出版ステータス | Published - 1994 |
外部発表 | はい |
ASJC Scopus subject areas
- 凝縮系物理学