Theoretical possibility of stage corrugation in Si and Ge analogs of graphite

Kyozaburo Takeda, Kenji Shiraishi

研究成果: Article査読

789 被引用数 (Scopus)

抄録

The planarity of the aromatic stage of two-dimensional Si and Ge layers are theoretically investigated by first-principles total-energy calculations. While a C atom prefers to form the flat aromatic stage, i.e., graphite, Si and Ge prefer to form the corrugated aromatic stage. Si can be said to be the critical element by which the corrugated stage is formed.

本文言語English
ページ(範囲)14916-14922
ページ数7
ジャーナルPhysical Review B
50
20
DOI
出版ステータスPublished - 1994
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学

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