Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials

Toshihide Takagahara, Kyozaburo Takeda

研究成果: Article査読

905 被引用数 (Scopus)

抄録

The quantum confinement effect on excitons in quantum dots of indirect-gap materials is investigated and a mechanism that induces an indirect-to-direct conversion of the character of the optical transition is clarified. The exciton transition energy and the exciton binding energy are calculated and found to be in good agreement with experimental results on Si and Ge nanostructures. The large exciton binding energy in Si and Ge quantum dots suggests that the photoluminescence from these nanostructures is of excitonic origin even at room temperature. The estimated radiative lifetime of excitons is strongly size dependent and varies from nanosecond to millisecond corresponding to the diameter from ∼10 to ∼30. These theoretical results suggest strongly the importance of the quantum confinement effect in the luminescence processes of porous Si.

本文言語English
ページ(範囲)15578-15581
ページ数4
ジャーナルPhysical Review B
46
23
DOI
出版ステータスPublished - 1992 1 1
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics

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