Thermal and ion beam induced reactions in Ni thin films on BP(100)

Naoto Kobayashi, Y. Kumashiro, P. Revesz, Jian Li, J. W. Mayer

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Thermal and ion beam induced reactions in Ni thin films on BP(100) have been investigated. For thermally annealed samples the reaction of the Ni layer on BP started at temperatures between 350 and 400°C and the formation of the crystalline phase corresponding to a composition of Ni4BP was observed at 450°C. It was observed that oxygen in the Ni layer could retard the progress of the reaction. The full reaction of the Ni layer with BP induced by energetic heavy ion bombardments (600 keV Xe) was observed at 230°C. The crystalline phase has the same composition and x-ray diffraction pattern for both thermal and ion-induced reactions.

本文言語English
ページ(範囲)1914-1915
ページ数2
ジャーナルApplied Physics Letters
54
19
DOI
出版ステータスPublished - 1989
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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