Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films

Kwang Soo Seol, Toshifumi Karasawa, Yoshimichi Ohki, Hiroyuki Nishikawa, Makoto Takiyama

研究成果: Article査読

6 被引用数 (Scopus)

抄録

When ion-implanted thermal SiO2 films are irradiated by photons at 5.0 eV, photoluminescence (PL) appears at 4.3, 2.7, and 1.9 eV. These PLs are related with defects in the SiO2 films. When the SiO2 films are annealed at high temperatures, both the 4.3 and 2.7 eV PL intensities decrease gradually with an increase in the annealing temperature and disappear at 500°C, while the 1.9 eV PL increases or stays constant up to 400°C and suddenly disappears at 500°C. Such annealing behavior is not influenced by the annealing atmosphere. In the case of the films degassed in high vacuum before implantation, it is observed that the PL bands survive the annealing at 500°C. This result suggests that dissolved gases in the film play an important role in the annihilation of defects induced by ion implantation.

本文言語English
ページ(範囲)193-195
ページ数3
ジャーナルMicroelectronic Engineering
36
1-4
DOI
出版ステータスPublished - 1997 6

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

フィンガープリント 「Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO<sub>2</sub> films」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル