Thermal bond reliability of high reliability gold alloy wires for automotive IC's

Tomohiro Uno, Keiichi Kimura, Kohei Tatsumi

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

Semiconductors for high temperature become increasingly important for automotive applications and power devices. High thermal interconnection technology is requested. Commercial 4N gold wire (purity>99.99%) caused a bond corrosion problem at elevated temperatures. Thermal bond reliability of gold alloy wire was investigated with HP alloy wire and LP alloy wire which include high and low concentration palladium, respectively. The bond strength of HP wire declined faster than 4N wire after aging at 423K. There were Pd-enriched compound and cracking at bond interface of HP wire. LP wire can exceed the target of 423K-2000hr for reliability testing. The alloy wire was also suitable for fine pitch bonding. In this paper, bond failure mechanism was clarified and high thermal reliability bonding wires developed were shown.

本文言語English
ホスト出版物のタイトルProceedings - 2005 International Symposium on Microelectronics, IMAPS 2005
ページ557-565
ページ数9
出版ステータスPublished - 2005 12 1
外部発表はい
イベント38th International Symposium on Microelectronics, IMAPS 2005 - Philadelphia, PA, United States
継続期間: 2005 9 252005 9 29

出版物シリーズ

名前Proceedings - 2005 International Symposium on Microelectronics, IMAPS 2005

Conference

Conference38th International Symposium on Microelectronics, IMAPS 2005
国/地域United States
CityPhiladelphia, PA
Period05/9/2505/9/29

ASJC Scopus subject areas

  • 電子工学および電気工学

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