Thermal conductivity of amorphous indium-gallium-zinc oxide thin films

Toru Yoshikawa; Takashi Yagi; Nobuto Oka; Junjun Jia; Yuichiro Yamashita; Koichiro Hattori; Yutaka Seino; Naoyuki Taketoshi; Tetsuya Baba; Yuzo Shigesato

doi:10.7567/APEX.6.021101

Thermal conductivity of amorphous indium-gallium-zinc oxide thin films

Toru Yoshikawa, Takashi Yagi, Nobuto Oka, Junjun Jia, Yuichiro Yamashita, Koichiro Hattori, Yutaka Seino, Naoyuki Taketoshi, Tetsuya Baba, Yuzo Shigesato

研究成果: Article › 査読

45 被引用数 (Scopus)

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We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In : Ga : Zn = 1 : 1 : 0:6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O₂ sputtering gas. The carrier density of the films was systematically controlled from 10¹⁴ to > 10 ¹⁹ cm^-3 by varying the O₂ flow ratio. Their Hall mobility was slightly higher than 10 cm².V^-1.s ^-1. Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was ∼5.4 × 10^-7 m².s^-1 and was almost independent of the carrier density. The average thermal conductivity was 1.4W.m^-1.K^-1.

本文言語	English
論文番号	021101
ジャーナル	Applied Physics Express
巻	6
号	2
DOI	https://doi.org/10.7567/APEX.6.021101
出版ステータス	Published - 2013 2 1
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.7567/APEX.6.021101

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@article{5183af8a8855434488ad164596ad76ee,

title = "Thermal conductivity of amorphous indium-gallium-zinc oxide thin films",

abstract = "We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In : Ga : Zn = 1 : 1 : 0:6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O2 sputtering gas. The carrier density of the films was systematically controlled from 1014 to > 10 19 cm-3 by varying the O2 flow ratio. Their Hall mobility was slightly higher than 10 cm2.V-1.s -1. Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was ∼5.4 × 10-7 m2.s-1 and was almost independent of the carrier density. The average thermal conductivity was 1.4W.m-1.K-1.",

author = "Toru Yoshikawa and Takashi Yagi and Nobuto Oka and Junjun Jia and Yuichiro Yamashita and Koichiro Hattori and Yutaka Seino and Naoyuki Taketoshi and Tetsuya Baba and Yuzo Shigesato",

year = "2013",

month = feb,

day = "1",

doi = "10.7567/APEX.6.021101",

language = "English",

volume = "6",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "2",

}

TY - JOUR

T1 - Thermal conductivity of amorphous indium-gallium-zinc oxide thin films

AU - Yoshikawa, Toru

AU - Yagi, Takashi

AU - Oka, Nobuto

AU - Jia, Junjun

AU - Yamashita, Yuichiro

AU - Hattori, Koichiro

AU - Seino, Yutaka

AU - Taketoshi, Naoyuki

AU - Baba, Tetsuya

AU - Shigesato, Yuzo

PY - 2013/2/1

Y1 - 2013/2/1

N2 - We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In : Ga : Zn = 1 : 1 : 0:6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O2 sputtering gas. The carrier density of the films was systematically controlled from 1014 to > 10 19 cm-3 by varying the O2 flow ratio. Their Hall mobility was slightly higher than 10 cm2.V-1.s -1. Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was ∼5.4 × 10-7 m2.s-1 and was almost independent of the carrier density. The average thermal conductivity was 1.4W.m-1.K-1.

AB - We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In : Ga : Zn = 1 : 1 : 0:6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O2 sputtering gas. The carrier density of the films was systematically controlled from 1014 to > 10 19 cm-3 by varying the O2 flow ratio. Their Hall mobility was slightly higher than 10 cm2.V-1.s -1. Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was ∼5.4 × 10-7 m2.s-1 and was almost independent of the carrier density. The average thermal conductivity was 1.4W.m-1.K-1.

UR - http://www.scopus.com/inward/record.url?scp=84875198597&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875198597&partnerID=8YFLogxK

U2 - 10.7567/APEX.6.021101

DO - 10.7567/APEX.6.021101

M3 - Article

AN - SCOPUS:84875198597

VL - 6

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 2

M1 - 021101

ER -

Thermal conductivity of amorphous indium-gallium-zinc oxide thin films

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