抄録
We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In : Ga : Zn = 1 : 1 : 0:6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O2 sputtering gas. The carrier density of the films was systematically controlled from 1014 to > 10 19 cm-3 by varying the O2 flow ratio. Their Hall mobility was slightly higher than 10 cm2.V-1.s -1. Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was ∼5.4 × 10-7 m2.s-1 and was almost independent of the carrier density. The average thermal conductivity was 1.4W.m-1.K-1.
本文言語 | English |
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論文番号 | 021101 |
ジャーナル | Applied Physics Express |
巻 | 6 |
号 | 2 |
DOI | |
出版ステータス | Published - 2013 2月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(全般)