Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy

G. Kudlek, J. Hollandt, N. Presser, J. Gutowski, S. M. Durbin, D. R. Menke, M. Kobayashi, R. L. Gunshor

研究成果: Article査読

7 被引用数 (Scopus)

抄録

For the first time, ZnSe epitaxial layers grown by molecular-beam epitaxy are shown to exhibit large contrast, low power, and extremely long-term stable thermally induced absorptive optical bistability. It is observed over a wide temperature range between 169 K and RT, with a strongly variable loop width and a switch-back adjustable to be less than 50% of the respective switch-down value. Critical slowing down as well as switch-down times are studied in dependence of the excess over the switch-down intensity values.

本文言語English
ページ(範囲)2532-2534
ページ数3
ジャーナルJournal of Applied Physics
68
5
DOI
出版ステータスPublished - 1990 12 1
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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