Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10-nanosheet seed layer

Junichi Kimura, Itaru Takuwa, Masaaki Matsushima, Takao Shimizu, Hiroshi Uchida, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko J. Konno, Tatsuo Shibata, Minoru Osada, Takayoshi Sasaki, Hiroshi Funakubo

研究成果: Article

5 引用 (Scopus)

抄録

To realize a high-temperature capacitor, uniaxially (001)-oriented CaBi4 Ti4O15 films with various film thicknesses were prepared on (100) c SrRuO3/Ca2Nb3O10-nanosheet/glass substrates. As the film thickness decreases to 50 nm, the out-of-plane lattice parameters decrease while the in-plane lattice ones increase due to the in-plane tensile strain. However, the relative dielectric constant (μ r) at room temperature exhibits a negligible degradation as the film thickness decreases to 50 nm, suggesting that μ r of (001)-oriented CaBi4Ti4O15 is less sensitive to the residual strain. The capacitance density increases monotonously with decreasing film thickness, reaching a value of 4.5 μF/cm2 for a 50-nm-thick nanofilm, and is stable against temperature changes from room temperature to 400 °C irrespective of film thickness. This behaviour differs from that of the widely investigated perovskite-structured dielectrics. These results show that (001)-oriented CaBi4Ti4O15 films derived using Ca2Nb3O10-nanosheets as seed layers can be made candidates for high-temperature capacitor applications by a small change in the dielectric properties against film thickness and temperature variations.

元の言語English
記事番号20713
ジャーナルScientific Reports
6
DOI
出版物ステータスPublished - 2016 2 15
外部発表Yes

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seeds
film thickness
capacitors
room temperature
dielectric properties
lattice parameters
capacitance
permittivity
degradation
temperature
glass

ASJC Scopus subject areas

  • General

これを引用

Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10-nanosheet seed layer. / Kimura, Junichi; Takuwa, Itaru; Matsushima, Masaaki; Shimizu, Takao; Uchida, Hiroshi; Kiguchi, Takanori; Shiraishi, Takahisa; Konno, Toyohiko J.; Shibata, Tatsuo; Osada, Minoru; Sasaki, Takayoshi; Funakubo, Hiroshi.

:: Scientific Reports, 巻 6, 20713, 15.02.2016.

研究成果: Article

Kimura, J, Takuwa, I, Matsushima, M, Shimizu, T, Uchida, H, Kiguchi, T, Shiraishi, T, Konno, TJ, Shibata, T, Osada, M, Sasaki, T & Funakubo, H 2016, 'Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10-nanosheet seed layer', Scientific Reports, 巻. 6, 20713. https://doi.org/10.1038/srep20713
Kimura, Junichi ; Takuwa, Itaru ; Matsushima, Masaaki ; Shimizu, Takao ; Uchida, Hiroshi ; Kiguchi, Takanori ; Shiraishi, Takahisa ; Konno, Toyohiko J. ; Shibata, Tatsuo ; Osada, Minoru ; Sasaki, Takayoshi ; Funakubo, Hiroshi. / Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10-nanosheet seed layer. :: Scientific Reports. 2016 ; 巻 6.
@article{7405e5d325c646f58f6dbc555e9d47cf,
title = "Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10-nanosheet seed layer",
abstract = "To realize a high-temperature capacitor, uniaxially (001)-oriented CaBi4 Ti4O15 films with various film thicknesses were prepared on (100) c SrRuO3/Ca2Nb3O10-nanosheet/glass substrates. As the film thickness decreases to 50 nm, the out-of-plane lattice parameters decrease while the in-plane lattice ones increase due to the in-plane tensile strain. However, the relative dielectric constant (μ r) at room temperature exhibits a negligible degradation as the film thickness decreases to 50 nm, suggesting that μ r of (001)-oriented CaBi4Ti4O15 is less sensitive to the residual strain. The capacitance density increases monotonously with decreasing film thickness, reaching a value of 4.5 μF/cm2 for a 50-nm-thick nanofilm, and is stable against temperature changes from room temperature to 400 °C irrespective of film thickness. This behaviour differs from that of the widely investigated perovskite-structured dielectrics. These results show that (001)-oriented CaBi4Ti4O15 films derived using Ca2Nb3O10-nanosheets as seed layers can be made candidates for high-temperature capacitor applications by a small change in the dielectric properties against film thickness and temperature variations.",
author = "Junichi Kimura and Itaru Takuwa and Masaaki Matsushima and Takao Shimizu and Hiroshi Uchida and Takanori Kiguchi and Takahisa Shiraishi and Konno, {Toyohiko J.} and Tatsuo Shibata and Minoru Osada and Takayoshi Sasaki and Hiroshi Funakubo",
year = "2016",
month = "2",
day = "15",
doi = "10.1038/srep20713",
language = "English",
volume = "6",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10-nanosheet seed layer

AU - Kimura, Junichi

AU - Takuwa, Itaru

AU - Matsushima, Masaaki

AU - Shimizu, Takao

AU - Uchida, Hiroshi

AU - Kiguchi, Takanori

AU - Shiraishi, Takahisa

AU - Konno, Toyohiko J.

AU - Shibata, Tatsuo

AU - Osada, Minoru

AU - Sasaki, Takayoshi

AU - Funakubo, Hiroshi

PY - 2016/2/15

Y1 - 2016/2/15

N2 - To realize a high-temperature capacitor, uniaxially (001)-oriented CaBi4 Ti4O15 films with various film thicknesses were prepared on (100) c SrRuO3/Ca2Nb3O10-nanosheet/glass substrates. As the film thickness decreases to 50 nm, the out-of-plane lattice parameters decrease while the in-plane lattice ones increase due to the in-plane tensile strain. However, the relative dielectric constant (μ r) at room temperature exhibits a negligible degradation as the film thickness decreases to 50 nm, suggesting that μ r of (001)-oriented CaBi4Ti4O15 is less sensitive to the residual strain. The capacitance density increases monotonously with decreasing film thickness, reaching a value of 4.5 μF/cm2 for a 50-nm-thick nanofilm, and is stable against temperature changes from room temperature to 400 °C irrespective of film thickness. This behaviour differs from that of the widely investigated perovskite-structured dielectrics. These results show that (001)-oriented CaBi4Ti4O15 films derived using Ca2Nb3O10-nanosheets as seed layers can be made candidates for high-temperature capacitor applications by a small change in the dielectric properties against film thickness and temperature variations.

AB - To realize a high-temperature capacitor, uniaxially (001)-oriented CaBi4 Ti4O15 films with various film thicknesses were prepared on (100) c SrRuO3/Ca2Nb3O10-nanosheet/glass substrates. As the film thickness decreases to 50 nm, the out-of-plane lattice parameters decrease while the in-plane lattice ones increase due to the in-plane tensile strain. However, the relative dielectric constant (μ r) at room temperature exhibits a negligible degradation as the film thickness decreases to 50 nm, suggesting that μ r of (001)-oriented CaBi4Ti4O15 is less sensitive to the residual strain. The capacitance density increases monotonously with decreasing film thickness, reaching a value of 4.5 μF/cm2 for a 50-nm-thick nanofilm, and is stable against temperature changes from room temperature to 400 °C irrespective of film thickness. This behaviour differs from that of the widely investigated perovskite-structured dielectrics. These results show that (001)-oriented CaBi4Ti4O15 films derived using Ca2Nb3O10-nanosheets as seed layers can be made candidates for high-temperature capacitor applications by a small change in the dielectric properties against film thickness and temperature variations.

UR - http://www.scopus.com/inward/record.url?scp=84958259312&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958259312&partnerID=8YFLogxK

U2 - 10.1038/srep20713

DO - 10.1038/srep20713

M3 - Article

VL - 6

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 20713

ER -