Thermodynamic analysis for crystal growth of the III-V compound

K. Yamaguchi, Y. Takeda

研究成果: Conference contribution

抄録

Partial pressure - temperature - composition correlation diagrams of the Ga-As, In-As, Ga-P and In-P systems were contracted based on the obtained experimental data of the phase diagram and thermodynamic properties for the III-V systems. The total vapor pressures or arsenic or phosphorus at melting point of GaAs, InAs, GaP and InP were determined as 101, 10.1, 1510 and 253 kPa, respectively, at the corresponding melting points of 1509, 1211, 1739 and 1336K. These diagrams are applied to the analysis of the horizontal Bridgman method and the liquid phase epitaxial growth technique. On the other hand, the analysis of the equilibrium state of the chloride-CVD process was carried out using the data of the Gibbs energy of the compounds obtained by authors.

本文言語English
ホスト出版物のタイトルProceedings of the Second International Conference on Processing Materials for Properties
編集者B. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi
ページ209-212
ページ数4
出版ステータスPublished - 2000 12 1
外部発表はい
イベントProceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA, United States
継続期間: 2000 11 52000 11 8

出版物シリーズ

名前Proceedings of the Second International Conference on Processing Materials for Properties

Conference

ConferenceProceedings of the Second International Conference on Processing Materials for Properties
CountryUnited States
CitySan Francisco, CA
Period00/11/500/11/8

ASJC Scopus subject areas

  • Engineering(all)

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