TY - JOUR
T1 - Thermodynamic analysis of the In-P, Ga-As, In-As and Al-Sb systems
AU - Yamaguchi, K.
AU - Itagaki, K.
AU - Chang, Y. A.
PY - 1996/12/1
Y1 - 1996/12/1
N2 - Thermodynamic and phase diagram data are used to optimize the thermodynamic model parameter values of the liquid phases in four III-V binary systems: In-P, Ga-As, In-As and Al-Sb. An associated solution model is used to describe the thermodynamic properties of the liquid phases and the III-V compound semiconductors are taken to be stoichiometric (or line) compounds. For each of the binary systems, a set of thermodynamic parameters for the liquid and compound semiconductors are obtained. Using these values, the calculated phase diagrams are in agreement with the experimentally determined ones. Moreover, the model-calculated thermodynamic values also in agreement with the experimentally determined values.
AB - Thermodynamic and phase diagram data are used to optimize the thermodynamic model parameter values of the liquid phases in four III-V binary systems: In-P, Ga-As, In-As and Al-Sb. An associated solution model is used to describe the thermodynamic properties of the liquid phases and the III-V compound semiconductors are taken to be stoichiometric (or line) compounds. For each of the binary systems, a set of thermodynamic parameters for the liquid and compound semiconductors are obtained. Using these values, the calculated phase diagrams are in agreement with the experimentally determined ones. Moreover, the model-calculated thermodynamic values also in agreement with the experimentally determined values.
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U2 - 10.1016/S0364-5916(97)00006-0
DO - 10.1016/S0364-5916(97)00006-0
M3 - Article
AN - SCOPUS:0030399360
VL - 20
SP - 439
EP - 446
JO - Calphad: Computer Coupling of Phase Diagrams and Thermochemistry
JF - Calphad: Computer Coupling of Phase Diagrams and Thermochemistry
SN - 0364-5916
IS - 4
ER -