Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment

Shuichiro Hashimoto, Kouta Takahashi, Shunsuke Oba, Takuya Terada, Masataka Ogasawara, Motohiro Tomita, Masashi Kurosawa, Takanobu Watanabe

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We performed a Peltier cooling experiment using SiGe wires fabricated by rapid-melting-growth (RMG) method. Thermal conductivity κ of SiGe wires estimated from the Peltier heating/cooling rate showed a significant dependence on the RMG process; the growth into one direction from a Si seed island exhibit a smaller κ than the bilateral growth. According to molecular dynamics simulation, the κ hardly depend on the compositional distribution, indicating the impact of the difference in the RMG processes.

本文言語English
ホスト出版物のタイトル2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページ283-285
ページ数3
ISBN(印刷版)9781538637111
DOI
出版ステータスPublished - 2018 7 26
イベント2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
継続期間: 2018 3 132018 3 16

出版物シリーズ

名前2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
国/地域Japan
CityKobe
Period18/3/1318/3/16

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 産業および生産工学
  • 電子材料、光学材料、および磁性材料

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