Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment

Shuichiro Hashimoto, Kouta Takahashi, Shunsuke Oba, Takuya Terada, Masataka Ogasawara, Motohiro Tomita, Masashi Kurosawa, Takanobu Watanabe

研究成果: Conference contribution

1 引用 (Scopus)

抄録

We performed a Peltier cooling experiment using SiGe wires fabricated by rapid-melting-growth (RMG) method. Thermal conductivity κ of SiGe wires estimated from the Peltier heating/cooling rate showed a significant dependence on the RMG process; the growth into one direction from a Si seed island exhibit a smaller κ than the bilateral growth. According to molecular dynamics simulation, the κ hardly depend on the compositional distribution, indicating the impact of the difference in the RMG processes.

元の言語English
ホスト出版物のタイトル2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
出版者Institute of Electrical and Electronics Engineers Inc.
ページ283-285
ページ数3
ISBN(印刷物)9781538637111
DOI
出版物ステータスPublished - 2018 7 26
イベント2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
継続期間: 2018 3 132018 3 16

Other

Other2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Japan
Kobe
期間18/3/1318/3/16

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Melting
Wire
Cooling
Experiments
Seed
Molecular dynamics
Thermal conductivity
Heating
Computer simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

これを引用

Hashimoto, S., Takahashi, K., Oba, S., Terada, T., Ogasawara, M., Tomita, M., ... Watanabe, T. (2018). Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. : 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 283-285). [8421517] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421517

Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. / Hashimoto, Shuichiro; Takahashi, Kouta; Oba, Shunsuke; Terada, Takuya; Ogasawara, Masataka; Tomita, Motohiro; Kurosawa, Masashi; Watanabe, Takanobu.

2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 283-285 8421517.

研究成果: Conference contribution

Hashimoto, S, Takahashi, K, Oba, S, Terada, T, Ogasawara, M, Tomita, M, Kurosawa, M & Watanabe, T 2018, Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. : 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421517, Institute of Electrical and Electronics Engineers Inc., pp. 283-285, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 18/3/13. https://doi.org/10.1109/EDTM.2018.8421517
Hashimoto S, Takahashi K, Oba S, Terada T, Ogasawara M, Tomita M その他. Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. : 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 283-285. 8421517 https://doi.org/10.1109/EDTM.2018.8421517
Hashimoto, Shuichiro ; Takahashi, Kouta ; Oba, Shunsuke ; Terada, Takuya ; Ogasawara, Masataka ; Tomita, Motohiro ; Kurosawa, Masashi ; Watanabe, Takanobu. / Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 283-285
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