Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.
|ジャーナル||Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|出版ステータス||Published - 1999 10月 21|
|イベント||Proceedings of the 1998 7th International Conference on Solid State Detectors - Nara, Jpn|
継続期間: 1998 12月 4 → 1998 12月 6
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