Thick and large area PIN diodes for hard X-ray astronomy

N. Ota*, T. Murakami, M. Sugizaki, M. Kaneda, T. Tamura, H. Ozawa, T. Kamae, K. Makishima, T. Takahashi, M. Tashiro, Y. Fukazawa, J. Kataoka, K. Yamaoka, S. Kubo, C. Tanihata, Y. Uchiyama, K. Matsuzaki, N. Iyomoto, M. Kokubun, T. NakazawaA. Kubota, T. Mizuno, Y. Matsumoto, N. Isobe, Y. Terada, M. Sugiho, T. Onishi, H. Kubo, H. Ikeda, M. Nomachi, T. Ohsugi, M. Muramatsu, H. Akahori

*この研究の対応する著者

研究成果: Conference article査読

14 被引用数 (Scopus)

抄録

Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

本文言語English
ページ(範囲)291-296
ページ数6
ジャーナルNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
436
1-2
DOI
出版ステータスPublished - 1999 10月 21
外部発表はい
イベントProceedings of the 1998 7th International Conference on Solid State Detectors - Nara, Jpn
継続期間: 1998 12月 41998 12月 6

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 器械工学

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