抄録
We experimentally investigated the breakdown lifetime of NMOS under inversion condition as a function of gate voltage by long-time-span tests and new power-law criteria. The lifetime followed the 1/E-rule above ∼4 V, but the power-law below ∼4 V. The power index decreased when the oxide became thinner. We observed no trace of the E-rule. We propose to adopt the powerlaw and the 1/E-rule in the reliability projection of core and I/O oxides, respectively. We need to appropriately consider the direct tunneling to model the breakdown below ∼4 V. The hole injection still seems to be playing an important role.
本文言語 | English |
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ページ(範囲) | 374-377 |
ページ数 | 4 |
ジャーナル | Microelectronic Engineering |
巻 | 80 |
号 | SUPPL. |
DOI | |
出版ステータス | Published - 2005 6月 17 |
外部発表 | はい |
ASJC Scopus subject areas
- ハードウェアとアーキテクチャ
- 電子工学および電気工学
- 電子材料、光学材料、および磁性材料
- 表面、皮膜および薄膜
- 原子分子物理学および光学