TY - JOUR
T1 - Threading dislocation reduction in inp on gaas by thin strained interlayer and its application to the fabrication of 1.3-μm-wavelength laser on gaas
AU - Okuno, Yae
AU - Kawano, Toshihiro
AU - Tsuchiya, Tomonobu
AU - Taniwatari, Tsuyoshi
PY - 1993/1
Y1 - 1993/1
N2 - This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and a long- wavelength laser fabricated on a GaAs substrate with SILs. A cross-sectional transmission electron microscope is used to observe the dislocation blocking ability of an SIL made of InGaP, which is inserted in an InP layer grown on a GaAs substrate. The characteristics of the BH laser emitting at 1.3 μm on GaAs are investigated. Most of them are improved by SIL insertion. In particular, threshold current is reduced to 70% on average and is also distributed more uniformly.
AB - This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and a long- wavelength laser fabricated on a GaAs substrate with SILs. A cross-sectional transmission electron microscope is used to observe the dislocation blocking ability of an SIL made of InGaP, which is inserted in an InP layer grown on a GaAs substrate. The characteristics of the BH laser emitting at 1.3 μm on GaAs are investigated. Most of them are improved by SIL insertion. In particular, threshold current is reduced to 70% on average and is also distributed more uniformly.
KW - InP on GaAs
KW - Long-wavelength laser on GaAs
KW - SIL
KW - TEM observation
KW - Threading dislocation reduction
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U2 - 10.1143/JJAP.32.614
DO - 10.1143/JJAP.32.614
M3 - Article
AN - SCOPUS:0027147126
VL - 32
SP - 614
EP - 617
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 1 S
ER -