Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs

Yae Okuno, Toshihiro Kawano, Tomonobu Tsuchiya, Tsuyoshi Taniwatari

研究成果: Paper査読

1 被引用数 (Scopus)

抄録

This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and long-wavelength lasers fabricated on a GaAs substrate with SILs. Cross-sectional transmission electron microscope (TEM) is used to observe the dislocation blocking ability of a InGaP SIL inserted in an InP layer grown on a GaAs substrate. The characteristics of the lasers are improved due to dislocation reduction. Their threshold current is reduced to 70% on average and is also distributed more uniformly.

本文言語English
ページ610-612
ページ数3
出版ステータスPublished - 1992 12 1
外部発表はい
イベントExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
継続期間: 1992 8 261992 8 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • 工学(全般)

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