This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and long-wavelength lasers fabricated on a GaAs substrate with SILs. Cross-sectional transmission electron microscope (TEM) is used to observe the dislocation blocking ability of a InGaP SIL inserted in an InP layer grown on a GaAs substrate. The characteristics of the lasers are improved due to dislocation reduction. Their threshold current is reduced to 70% on average and is also distributed more uniformly.
|出版ステータス||Published - 1992 12 1|
|イベント||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
継続期間: 1992 8 26 → 1992 8 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
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