Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation

Takuro Naramura*, Masafumi Inaba, Sho Mizuno, Keisuke Igarashi, Eriko Kida, Shaili Falina Mohd Sukri, Yukihiro Shintani, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Diamond electrolyte solution-gate-field effect transistors (SGFETs) are suitable for applications as chemical ion sensors because of their wide potential window and good physical and chemical stabilities. In this study, we fabricated an anodically oxidized diamond SGFET from a full hydrogen-terminated diamond SGFET and demonstrated control of the device threshold voltage by irreversible anodic oxidation. The applied anodic bias voltage (VAO) was varied gradually from low to high (1.1-1.7 V). As the anodic oxidation proceeded, the threshold voltage shifted to more negative values with no degradation of hole mobility. Thus, anodic oxidation is a useful method for controlling the threshold voltage of diamond SGFETs.

本文言語English
論文番号013505
ジャーナルApplied Physics Letters
111
1
DOI
出版ステータスPublished - 2017 7月 3

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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