We have performed time-resolved photoluminescence and electroluminescence measurements for an InGaN quantum well at 300 K to investigate the carrier dynamics. Electroluminescence measurement yields more direct information of the carrier dynamics of device operation, because carriers are generated by current injection in optoelectronic devices. The time evolution of EL spectra indicates that spatial indium fluctuations become significant with increasing In content in nitride-based optoelectronic applications.
|ジャーナル||Physica Status Solidi C: Conferences|
|出版ステータス||Published - 2002 12 1|
|イベント||2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany|
継続期間: 2002 7 22 → 2002 7 25
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