Time-resolved electroluminescence study of green light-emitting diode

T. Kuroda*, N. Horio, K. Taniguchi, H. Sato, C. Funaoka, A. Tackeuchi

*この研究の対応する著者

研究成果: Conference article査読

抄録

We have performed time-resolved photoluminescence and electroluminescence measurements for an InGaN quantum well at 300 K to investigate the carrier dynamics. Electroluminescence measurement yields more direct information of the carrier dynamics of device operation, because carriers are generated by current injection in optoelectronic devices. The time evolution of EL spectra indicates that spatial indium fluctuations become significant with increasing In content in nitride-based optoelectronic applications.

本文言語English
ページ(範囲)25-28
ページ数4
ジャーナルPhysica Status Solidi C: Conferences
1
DOI
出版ステータスPublished - 2002 12 1
イベント2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
継続期間: 2002 7 222002 7 25

ASJC Scopus subject areas

  • 凝縮系物理学

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