Time-resolved measurements of photoluminescence were carried out on a hydrogenated amorphous silicon nitride film prepared by low-pressure chemical vapor deposition. When excited with 5.0-eV photons, photoluminescence occurs over a broad spectrum ranging from 1.8 to 3.6 eV. The peak energy of this photoluminescence varies with time from several nanoseconds to nearly 1 ms. These results are explained by a combination of an excitonlike recombination process and a radiative tunneling recombination process of photogenerated carriers within the band-tail states, which are affected by the contributions of thermalization, the Coulombic interaction, and the extent of localization.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版ステータス||Published - 2000|
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