Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O 4 composite layer

Qing Yang; Xiaohong Zhou; Takao Nukui; Yu Saeki; Sotaro Izumi; Atsushi Tackeuchi; Hirokazu Tatsuoka; Shuhua Liang

doi:10.1063/1.4864750

Time-resolved ultraviolet photoluminescence of ZnO/ZnGa₂O ₄ composite layer

Qing Yang^*, Xiaohong Zhou, Takao Nukui, Yu Saeki, Sotaro Izumi, Atsushi Tackeuchi, Hirokazu Tatsuoka, Shuhua Liang

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

7 被引用数 (Scopus)

抄録

The ultraviolet photoluminescence of ZnO/ZnGa₂O₄ composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D ⁰X emission is easily saturated than the DAP emission from ZnO/ZnGa₂O₄ composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa₂O₄ composite layer.

本文言語	English
論文番号	027101
ジャーナル	AIP Advances
巻	4
号	2
DOI	https://doi.org/10.1063/1.4864750
出版ステータス	Published - 2014 2

ASJC Scopus subject areas

物理学および天文学（全般）

文献へのアクセス

10.1063/1.4864750

他のファイルとリンク

引用スタイル

@article{8565dbde84324ad2a0fd35adf6615e23,

title = "Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O 4 composite layer",

abstract = "The ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D 0X emission is easily saturated than the DAP emission from ZnO/ZnGa2O4 composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa2O4 composite layer.",

author = "Qing Yang and Xiaohong Zhou and Takao Nukui and Yu Saeki and Sotaro Izumi and Atsushi Tackeuchi and Hirokazu Tatsuoka and Shuhua Liang",

year = "2014",

month = feb,

doi = "10.1063/1.4864750",

language = "English",

volume = "4",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O 4 composite layer

AU - Yang, Qing

AU - Zhou, Xiaohong

AU - Nukui, Takao

AU - Saeki, Yu

AU - Izumi, Sotaro

AU - Tackeuchi, Atsushi

AU - Tatsuoka, Hirokazu

AU - Liang, Shuhua

PY - 2014/2

Y1 - 2014/2

N2 - The ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D 0X emission is easily saturated than the DAP emission from ZnO/ZnGa2O4 composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa2O4 composite layer.

AB - The ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D 0X emission is easily saturated than the DAP emission from ZnO/ZnGa2O4 composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa2O4 composite layer.

UR - http://www.scopus.com/inward/record.url?scp=84893983581&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893983581&partnerID=8YFLogxK

U2 - 10.1063/1.4864750

DO - 10.1063/1.4864750

M3 - Article

AN - SCOPUS:84893983581

VL - 4

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 2

M1 - 027101

ER -