抄録
The ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D 0X emission is easily saturated than the DAP emission from ZnO/ZnGa2O4 composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa2O4 composite layer.
本文言語 | English |
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論文番号 | 027101 |
ジャーナル | AIP Advances |
巻 | 4 |
号 | 2 |
DOI | |
出版ステータス | Published - 2014 2月 |
ASJC Scopus subject areas
- 物理学および天文学(全般)