Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O 4 composite layer

Qing Yang; Xiaohong Zhou; Takao Nukui; Yu Saeki; Sotaro Izumi; Atsushi Tackeuchi; Hirokazu Tatsuoka; Shuhua Liang

doi:10.1063/1.4864750

Time-resolved ultraviolet photoluminescence of ZnO/ZnGa₂O ₄ composite layer

Qing Yang^*, Xiaohong Zhou, Takao Nukui, Yu Saeki, Sotaro Izumi, Atsushi Tackeuchi, Hirokazu Tatsuoka, Shuhua Liang

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

7 被引用数 (Scopus)

抄録

The ultraviolet photoluminescence of ZnO/ZnGa₂O₄ composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D ⁰X emission is easily saturated than the DAP emission from ZnO/ZnGa₂O₄ composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa₂O₄ composite layer.

本文言語	English
論文番号	027101
ジャーナル	AIP Advances
巻	4
号	2
DOI	https://doi.org/10.1063/1.4864750
出版ステータス	Published - 2014 2月

ASJC Scopus subject areas

物理学および天文学（全般）

文献へのアクセス

10.1063/1.4864750

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引用スタイル

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abstract = "The ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D 0X emission is easily saturated than the DAP emission from ZnO/ZnGa2O4 composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa2O4 composite layer.",

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T1 - Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O 4 composite layer

AU - Yang, Qing

AU - Zhou, Xiaohong

AU - Nukui, Takao

AU - Saeki, Yu

AU - Izumi, Sotaro

AU - Tackeuchi, Atsushi

AU - Tatsuoka, Hirokazu

AU - Liang, Shuhua

PY - 2014/2

Y1 - 2014/2

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AB - The ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D 0X emission is easily saturated than the DAP emission from ZnO/ZnGa2O4 composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa2O4 composite layer.

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