Top-seeded solution growth of 3 inch diameter 4H-SiC bulk crystal using metal solvents

K. Kusunoki, K. Kamei, N. Okada, K. Moriguchi, H. Kaido, H. Daikoku, M. Kado, K. Danno, H. Sakamoto, T. Bessho, T. Ujihara

研究成果: Conference contribution

11 被引用数 (Scopus)

抄録

We performed top-seeded solution growth of 4H-SiC for obtaining longer length crystal. Si-Cr and Si-Ti melts were used as solvents. Meniscus formation technique was applied to the present study. Special attention was paid to improve the process stability during long-term growth. One of major technological problems in the solution growth is that the precipitation of polycrystalline SiC which hiders the stable single crystal growth. Another problem is the fluctuation of supersaturation at the growth interface during the growth. Through the optimization of growth process conditions, we have successfully grown 4H-SiC single crystals up to 14 mm long with three-inch-diameter, and evaluated their crystalline quality.

本文言語English
ホスト出版物のタイトルMaterials Science Forum
出版社Trans Tech Publications Ltd
ページ79-82
ページ数4
778-780
ISBN(印刷版)9783038350101
DOI
出版ステータスPublished - 2014
外部発表はい
イベント15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
継続期間: 2013 9 292013 10 4

出版物シリーズ

名前Materials Science Forum
778-780
ISSN(印刷版)02555476

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period13/9/2913/10/4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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