Top-seeded solution growth of 4H-SiC bulk crystal using Si-Cr based melt

H. Daikoku, M. Kado, H. Sakamoto, H. Suzuki, T. Bessho, K. Kusunoki, N. Yashiro, N. Okada, K. Moriguchi, K. Kamei

研究成果: Conference contribution

35 被引用数 (Scopus)

抄録

We have grown high-quality long cylindrical (12 mm thick) 4H-SiC bulk crystals by the meniscus formation technique, which was first applied for the solution growth of bulk SiC. It enabled long-term growth by suppressing parasitic reactions such as polycrystal precipitation around the seed crystal. In addition, we could control the growth angle from -22° to 61° by adjusting the meniscus height. The thickness of the grown cylindrical crystals was 12 mm, which is the largest reported until now, and corresponded to a growth rate of 0.6 mm/h. Smooth morphology growth was maintained on the (000-1) C-face. In cross-sectional transmission optical microscopy images, few solvent inclusions and voids were observed. XRD measurements revealed that the FWHM values of the grown crystals were almost the same as those of the seed crystal.

本文言語English
ホスト出版物のタイトルMaterials Science Forum
ページ61-64
ページ数4
717-720
DOI
出版ステータスPublished - 2012
外部発表はい
イベント14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
継続期間: 2011 9 112011 9 16

出版物シリーズ

名前Materials Science Forum
717-720
ISSN(印刷版)02555476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period11/9/1111/9/16

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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