TY - GEN
T1 - Top-seeded solution growth of 4H-SiC bulk crystal using Si-Cr based melt
AU - Daikoku, H.
AU - Kado, M.
AU - Sakamoto, H.
AU - Suzuki, H.
AU - Bessho, T.
AU - Kusunoki, K.
AU - Yashiro, N.
AU - Okada, N.
AU - Moriguchi, K.
AU - Kamei, K.
PY - 2012
Y1 - 2012
N2 - We have grown high-quality long cylindrical (12 mm thick) 4H-SiC bulk crystals by the meniscus formation technique, which was first applied for the solution growth of bulk SiC. It enabled long-term growth by suppressing parasitic reactions such as polycrystal precipitation around the seed crystal. In addition, we could control the growth angle from -22° to 61° by adjusting the meniscus height. The thickness of the grown cylindrical crystals was 12 mm, which is the largest reported until now, and corresponded to a growth rate of 0.6 mm/h. Smooth morphology growth was maintained on the (000-1) C-face. In cross-sectional transmission optical microscopy images, few solvent inclusions and voids were observed. XRD measurements revealed that the FWHM values of the grown crystals were almost the same as those of the seed crystal.
AB - We have grown high-quality long cylindrical (12 mm thick) 4H-SiC bulk crystals by the meniscus formation technique, which was first applied for the solution growth of bulk SiC. It enabled long-term growth by suppressing parasitic reactions such as polycrystal precipitation around the seed crystal. In addition, we could control the growth angle from -22° to 61° by adjusting the meniscus height. The thickness of the grown cylindrical crystals was 12 mm, which is the largest reported until now, and corresponded to a growth rate of 0.6 mm/h. Smooth morphology growth was maintained on the (000-1) C-face. In cross-sectional transmission optical microscopy images, few solvent inclusions and voids were observed. XRD measurements revealed that the FWHM values of the grown crystals were almost the same as those of the seed crystal.
KW - 4H SiC
KW - Meniscus
KW - Solution growth
UR - http://www.scopus.com/inward/record.url?scp=84861386831&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861386831&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.717-720.61
DO - 10.4028/www.scientific.net/MSF.717-720.61
M3 - Conference contribution
AN - SCOPUS:84861386831
SN - 9783037854198
VL - 717-720
T3 - Materials Science Forum
SP - 61
EP - 64
BT - Materials Science Forum
T2 - 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
Y2 - 11 September 2011 through 16 September 2011
ER -