Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique

Kazuhiko Kusunoki, Nobuhiro Okada, Kazuhito Kamei, Koji Moriguchi, Hironori Daikoku, Motohisa Kado, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara

研究成果: Article査読

41 被引用数 (Scopus)

抄録

The top-seeded solution growth of 4H-SiC at three inches in diameter has been investigated using Si-Ti alloy as a solvent. A perforated graphite disk called "immersion guide" (IG) was positioned in the solution in order to control solution flow. The morphological instability was improved and growth rate was significantly increased using the IG compared with conventional growth without the IG. Numerical fluid flow analysis with coupled heat and mass transportation was performed as well to understand convection and growth behavior. The origins of these improvements in the growth performance are discussed based on the numerical results. By controlling solution flow, we could successfully grow a three-inch-diameter 4H-SiC with 4-mm thickness.

本文言語English
ページ(範囲)68-73
ページ数6
ジャーナルJournal of Crystal Growth
395
DOI
出版ステータスPublished - 2014 6 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 材料化学
  • 無機化学

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