Topological proximity effect in a topological insulator hybrid

T. Shoman, A. Takayama, T. Sato*, S. Souma, T. Takahashi, T. Oguchi, Kouji Segawa, Yoichi Ando

*この研究の対応する著者

研究成果: Article査読

38 被引用数 (Scopus)

抄録

It is well known that a topologically protected gapless state appears at an interface between a topological insulator and an ordinary insulator; however, the physics of the interface between a topological insulator and a metal has largely been left unexplored. Here we report a novel phenomenon termed topological proximity effect, which occurs between a metallic ultrathin film and a three-dimensional topological insulator. We study one bilayer of bismuth metal grown on the three-dimensional topological insulator material TlBiSe2, and by using spin- and angle-resolved photoemission spectroscopy, we found evidence that the topological Dirac-cone state migrates from the surface of TlBiSe2 to the attached one-bilayer Bi. We show that such a migration of the topological state occurs as a result of strong spin-dependent hybridization of the wave functions at the interface, which is also supported by our first-principles calculations. This discovery points to a new route to manipulating the topological properties of materials.

本文言語English
論文番号6547
ジャーナルNature communications
6
DOI
出版ステータスPublished - 2015 3月 12
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 生化学、遺伝学、分子生物学(全般)
  • 物理学および天文学(全般)

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