Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique

T. Matsukawa, A. Kishida, Takashi Tanii, M. Koh, K. Horita, K. Hara, B. Shigeta, M. Goto, S. Matsuda, S. Kuboyama, I. Ohdomari

    研究成果: Article

    24 引用 (Scopus)

    抄録

    Total dose effect on the soft-error susceptibility of 64 kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p-MOSFETs have become more susceptible at higher dose while that of the n-MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage(Vth) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.

    元の言語English
    ページ(範囲)2071-2076
    ページ数6
    ジャーナルIEEE Transactions on Nuclear Science
    41
    発行部数6 p 1
    出版物ステータスPublished - 1994 12

    Fingerprint

    Static random access storage
    hardness
    Hardness
    dosage
    Ions
    ions
    field effect transistors
    magnetic permeability
    Ion bombardment
    ion irradiation
    Threshold voltage
    threshold voltage
    CMOS
    damage
    Data storage equipment
    Oxides
    oxides
    sensitivity
    shift
    cells

    ASJC Scopus subject areas

    • Nuclear Energy and Engineering
    • Electrical and Electronic Engineering

    これを引用

    Matsukawa, T., Kishida, A., Tanii, T., Koh, M., Horita, K., Hara, K., ... Ohdomari, I. (1994). Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique. IEEE Transactions on Nuclear Science, 41(6 p 1), 2071-2076.

    Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique. / Matsukawa, T.; Kishida, A.; Tanii, Takashi; Koh, M.; Horita, K.; Hara, K.; Shigeta, B.; Goto, M.; Matsuda, S.; Kuboyama, S.; Ohdomari, I.

    :: IEEE Transactions on Nuclear Science, 巻 41, 番号 6 p 1, 12.1994, p. 2071-2076.

    研究成果: Article

    Matsukawa, T, Kishida, A, Tanii, T, Koh, M, Horita, K, Hara, K, Shigeta, B, Goto, M, Matsuda, S, Kuboyama, S & Ohdomari, I 1994, 'Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique', IEEE Transactions on Nuclear Science, 巻. 41, 番号 6 p 1, pp. 2071-2076.
    Matsukawa, T. ; Kishida, A. ; Tanii, Takashi ; Koh, M. ; Horita, K. ; Hara, K. ; Shigeta, B. ; Goto, M. ; Matsuda, S. ; Kuboyama, S. ; Ohdomari, I. / Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique. :: IEEE Transactions on Nuclear Science. 1994 ; 巻 41, 番号 6 p 1. pp. 2071-2076.
    @article{d4d289fa53dd462faa9b52a24e57be4e,
    title = "Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique",
    abstract = "Total dose effect on the soft-error susceptibility of 64 kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p-MOSFETs have become more susceptible at higher dose while that of the n-MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage(Vth) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.",
    author = "T. Matsukawa and A. Kishida and Takashi Tanii and M. Koh and K. Horita and K. Hara and B. Shigeta and M. Goto and S. Matsuda and S. Kuboyama and I. Ohdomari",
    year = "1994",
    month = "12",
    language = "English",
    volume = "41",
    pages = "2071--2076",
    journal = "IEEE Transactions on Nuclear Science",
    issn = "0018-9499",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",
    number = "6 p 1",

    }

    TY - JOUR

    T1 - Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique

    AU - Matsukawa, T.

    AU - Kishida, A.

    AU - Tanii, Takashi

    AU - Koh, M.

    AU - Horita, K.

    AU - Hara, K.

    AU - Shigeta, B.

    AU - Goto, M.

    AU - Matsuda, S.

    AU - Kuboyama, S.

    AU - Ohdomari, I.

    PY - 1994/12

    Y1 - 1994/12

    N2 - Total dose effect on the soft-error susceptibility of 64 kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p-MOSFETs have become more susceptible at higher dose while that of the n-MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage(Vth) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.

    AB - Total dose effect on the soft-error susceptibility of 64 kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p-MOSFETs have become more susceptible at higher dose while that of the n-MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage(Vth) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.

    UR - http://www.scopus.com/inward/record.url?scp=0028712008&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0028712008&partnerID=8YFLogxK

    M3 - Article

    AN - SCOPUS:0028712008

    VL - 41

    SP - 2071

    EP - 2076

    JO - IEEE Transactions on Nuclear Science

    JF - IEEE Transactions on Nuclear Science

    SN - 0018-9499

    IS - 6 p 1

    ER -