Total Dose Dependence of Soft-Error Hardness in 64kbit SRAMs Evaluated by Single-Ion Microprobe Technique

T. Matsukawa, A. Kishida, T. Tanii, M. Koh, K. Horita, K. Hara, B. Shigeta, M. Goto, I. Ohdomari, S. Matsuda, S. Kuboyama

研究成果: Article査読

25 被引用数 (Scopus)

抄録

Total dose effect on the soft-error susceptibility of 64kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p MOSFETs have become more susceptible at higher dose while that of the N MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage(Vth) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.

本文言語English
ページ(範囲)2071-2076
ページ数6
ジャーナルIEEE Transactions on Nuclear Science
41
6
DOI
出版ステータスPublished - 1994 12

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 原子力エネルギーおよび原子力工学
  • 電子工学および電気工学

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