Transconductance enhancement by utilizing pattern dependent oxidation in silicon nanowire field-effect transistors

A. Seike*, T. Tange, I. Sano, Y. Sugiura, I. Tsuchida, H. Ohta, T. Watanabe, D. Kosemura, A. Ogura, I. Ohdomari

*この研究の対応する著者

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman lines in the strain controlled devices display an increase in the full width half maximum, and a shift to lower wavenumber confirming that gm enhancement is due to tensile stress introduced by the PADOX approach

本文言語English
ホスト出版物のタイトルECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
ホスト出版物のサブタイトルNew Materials, Processes, and Equipment
ページ351-358
ページ数8
1
DOI
出版ステータスPublished - 2008
イベントAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States
継続期間: 2008 5 182008 5 22

出版物シリーズ

名前ECS Transactions
番号1
13
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Conference

ConferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4
国/地域United States
CityPhoenix, AZ
Period08/5/1808/5/22

ASJC Scopus subject areas

  • 工学(全般)

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