Transconductance enhancement of Si nanowire transistors by oxide-induced strain

A. Seike*, T. Tange, I. Sano, Y. Sugiura, I. Tsuchida, H. Ohta, T. Watanabe, D. Kosemura, A. Ogura, I. Ohdomari

*この研究の対応する著者

研究成果: Conference contribution

抄録

Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman spectra features in the strain controlled devices display an increase in the full width half maximum, and a shift to lower wavenumber confirming that gm enhancement is due to tensile stress introduced by the PADOX approach.

本文言語English
ホスト出版物のタイトルProceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
ページ207-210
ページ数4
DOI
出版ステータスPublished - 2008
イベントIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 - Minatec Grenoble, France
継続期間: 2008 6 22008 6 4

出版物シリーズ

名前Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Conference

ConferenceIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008
国/地域France
CityMinatec Grenoble
Period08/6/208/6/4

ASJC Scopus subject areas

  • 人間とコンピュータの相互作用
  • 電子工学および電気工学

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