Transforming domain motion for 3D racetrack memory with perpendicular magnetic anisotropy

Syuta Honda*, Yoshiaki Sonobe, Simon John Greaves

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Domain-wall motion type magnetic memories are expected to be among the next generation of magnetic recording devices and vertical-NAND memories. In particular, three-dimensional race track memory (3D-RM), which extends vertically from a substrate is important for high integration. We propose a vertical 3D-RM loop consisting of two horizontal and two vertical nanowires in which the magnetic anisotropy is perpendicular to the substrate. The horizontal nanowires contain perpendicularly magnetized domains and Néel type domain walls (DWs). The vertical nanowires contain longitudinally magnetized domains with head-to-head or tail-to-tail DWs. DW motion is demonstrated using micromagnetic simulations based on the Landau–Lifshitz–Gilbert equation. We find that a DW can pass around a corner while deforming its own shape. The threshold current density to push a DW around a corner has a maximum value for wire thickness of about 10 nm.

本文言語English
論文番号135002
ジャーナルJournal of Physics D: Applied Physics
54
13
DOI
出版ステータスPublished - 2021 4月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 音響学および超音波学
  • 表面、皮膜および薄膜

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