Transition from excitonic tunneling to free carrier tunneling in GaAs/AlGaAs double quantum wells

Shulong Lu, Takafumi Ushiyama, Taisuke Fujita, Koji Kusunoki, Atsushi Tackeuchi, Shunichi Muto

研究成果: Article

1 引用 (Scopus)

抜粋

Nonresonant carrier tunneling has been studied as a function of temperature in GaAs/AlGaAs double quantum wells (DQWs). Time-resolved pump and probe reflectance measurements allow the direct observation of tunneling at any temperature between 15 K and room temperature. We found that for two DQWs with different barrier thicknesses, the tunneling time abruptly decreases above a critical temperature while it remains almost constant below the critical temperature. This critical temperature is shown to correspond to the exciton binding energy. Rate equation analysis explains this behavior as the thermalization of excitons into free electrons that have a faster tunneling time than excitons.

元の言語English
ページ(範囲)3305-3308
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
発行部数6 A
DOI
出版物ステータスPublished - 2007 6 6

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント Transition from excitonic tunneling to free carrier tunneling in GaAs/AlGaAs double quantum wells' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用