TY - JOUR
T1 - Transition of topological Hall effect for tetragonal Heusler Mn2PtSn thin film
AU - Sugimoto, Satoshi
AU - Takahashi, Yukiko
AU - Kasai, Shinya
N1 - Publisher Copyright:
© 2021 The Japan Society of Applied Physics.
PY - 2021/10
Y1 - 2021/10
N2 - A large topological Hall effect was observed in Mn2PtSn epitaxial thin films. The non-hysteretic topological Hall resistivity can be attributed to the canted spins below the reorientation temperature, while the hysteretic topological resistivity in the vicinity of the zero field captures the trend of antiskyrmion formation. A decrease in thickness enhances the contribution of dipolar interactions, leading to an additional antiskyrmion-type signal above the reorientation temperature. The amplitudes of these topological signals are strongly modulated by the film thickness, providing pathways for developing antiskyrmion-hosting media via film engineering.
AB - A large topological Hall effect was observed in Mn2PtSn epitaxial thin films. The non-hysteretic topological Hall resistivity can be attributed to the canted spins below the reorientation temperature, while the hysteretic topological resistivity in the vicinity of the zero field captures the trend of antiskyrmion formation. A decrease in thickness enhances the contribution of dipolar interactions, leading to an additional antiskyrmion-type signal above the reorientation temperature. The amplitudes of these topological signals are strongly modulated by the film thickness, providing pathways for developing antiskyrmion-hosting media via film engineering.
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U2 - 10.35848/1882-0786/ac223f
DO - 10.35848/1882-0786/ac223f
M3 - Article
AN - SCOPUS:85115926217
SN - 1882-0778
VL - 14
JO - Applied Physics Express
JF - Applied Physics Express
IS - 10
M1 - 103003
ER -