Transparent conductive Al and Ga doped ZnO films deposited using off-axis sputtering

Junjun Jia, Aya Yoshimura, Yukihiro Kagoya, Nobuto Oka, Yuzo Shigesato

研究成果: Article

12 引用 (Scopus)

抜粋

Al and Ga doped ZnO (AZO and GZO) films were deposited using an off-axis dc magnetron sputtering method. At the off-axis positions, both the mobility and carrier density increased, resulting in enhanced conductivity of both the AZO and GZO films due to an increase in the crystallinity. The lowest resistivities of the AZO and GZO films deposited at room temperature were 1.1 × 10 - 3 Ω cm and 6.5 × 10- 4 Ω cm, respectively. Increasing the substrate temperature up to 130 °C led to a decrease in the lowest resistivity to 6.1 × 10- 4 Ω cm for the AZO films. The transmittance of all films was above 80% in the visible region. These results suggest that off-axis magnetron sputtering might be a potentially effective deposition method with the reduced bombardments from high-energy particles.

元の言語English
ページ(範囲)69-77
ページ数9
ジャーナルThin Solid Films
559
DOI
出版物ステータスPublished - 2014 5 30
外部発表Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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