Transparent conductive Al and Ga doped ZnO films deposited using off-axis sputtering

Junjun Jia; Aya Yoshimura; Yukihiro Kagoya; Nobuto Oka; Yuzo Shigesato

doi:10.1016/j.tsf.2014.02.005

Transparent conductive Al and Ga doped ZnO films deposited using off-axis sputtering

Junjun Jia, Aya Yoshimura, Yukihiro Kagoya, Nobuto Oka, Yuzo Shigesato

研究成果: Article › 査読

12 被引用数 (Scopus)

抄録

Al and Ga doped ZnO (AZO and GZO) films were deposited using an off-axis dc magnetron sputtering method. At the off-axis positions, both the mobility and carrier density increased, resulting in enhanced conductivity of both the AZO and GZO films due to an increase in the crystallinity. The lowest resistivities of the AZO and GZO films deposited at room temperature were 1.1 × 10 ^{- 3} Ω cm and 6.5 × 10^{- 4} Ω cm, respectively. Increasing the substrate temperature up to 130 °C led to a decrease in the lowest resistivity to 6.1 × 10^{- 4} Ω cm for the AZO films. The transmittance of all films was above 80% in the visible region. These results suggest that off-axis magnetron sputtering might be a potentially effective deposition method with the reduced bombardments from high-energy particles.

本文言語	English
ページ（範囲）	69-77
ページ数	9
ジャーナル	Thin Solid Films
巻	559
DOI	https://doi.org/10.1016/j.tsf.2014.02.005
出版ステータス	Published - 2014 5 30
外部発表	はい

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2014.02.005

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引用スタイル

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title = "Transparent conductive Al and Ga doped ZnO films deposited using off-axis sputtering",

abstract = "Al and Ga doped ZnO (AZO and GZO) films were deposited using an off-axis dc magnetron sputtering method. At the off-axis positions, both the mobility and carrier density increased, resulting in enhanced conductivity of both the AZO and GZO films due to an increase in the crystallinity. The lowest resistivities of the AZO and GZO films deposited at room temperature were 1.1 × 10 - 3 Ω cm and 6.5 × 10- 4 Ω cm, respectively. Increasing the substrate temperature up to 130 °C led to a decrease in the lowest resistivity to 6.1 × 10- 4 Ω cm for the AZO films. The transmittance of all films was above 80% in the visible region. These results suggest that off-axis magnetron sputtering might be a potentially effective deposition method with the reduced bombardments from high-energy particles.",

keywords = "AZO, GZO, Off-axis sputtering, Scattering mechanism",

author = "Junjun Jia and Aya Yoshimura and Yukihiro Kagoya and Nobuto Oka and Yuzo Shigesato",

note = "Funding Information: This work was partially supported by the New Energy and Industrial Technology Development Organization (NEDO) as a project of the “ Fundamental Technology Development of Next Generation Lighting of High-efficiency and High-quality .” Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "2014",

month = may,

day = "30",

doi = "10.1016/j.tsf.2014.02.005",

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AU - Jia, Junjun

AU - Yoshimura, Aya

AU - Kagoya, Yukihiro

AU - Oka, Nobuto

AU - Shigesato, Yuzo

N1 - Funding Information: This work was partially supported by the New Energy and Industrial Technology Development Organization (NEDO) as a project of the “ Fundamental Technology Development of Next Generation Lighting of High-efficiency and High-quality .” Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 2014/5/30

Y1 - 2014/5/30

N2 - Al and Ga doped ZnO (AZO and GZO) films were deposited using an off-axis dc magnetron sputtering method. At the off-axis positions, both the mobility and carrier density increased, resulting in enhanced conductivity of both the AZO and GZO films due to an increase in the crystallinity. The lowest resistivities of the AZO and GZO films deposited at room temperature were 1.1 × 10 - 3 Ω cm and 6.5 × 10- 4 Ω cm, respectively. Increasing the substrate temperature up to 130 °C led to a decrease in the lowest resistivity to 6.1 × 10- 4 Ω cm for the AZO films. The transmittance of all films was above 80% in the visible region. These results suggest that off-axis magnetron sputtering might be a potentially effective deposition method with the reduced bombardments from high-energy particles.

AB - Al and Ga doped ZnO (AZO and GZO) films were deposited using an off-axis dc magnetron sputtering method. At the off-axis positions, both the mobility and carrier density increased, resulting in enhanced conductivity of both the AZO and GZO films due to an increase in the crystallinity. The lowest resistivities of the AZO and GZO films deposited at room temperature were 1.1 × 10 - 3 Ω cm and 6.5 × 10- 4 Ω cm, respectively. Increasing the substrate temperature up to 130 °C led to a decrease in the lowest resistivity to 6.1 × 10- 4 Ω cm for the AZO films. The transmittance of all films was above 80% in the visible region. These results suggest that off-axis magnetron sputtering might be a potentially effective deposition method with the reduced bombardments from high-energy particles.

KW - AZO

KW - GZO

KW - Off-axis sputtering

KW - Scattering mechanism

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