Transparent conductive Nb-doped TiO                         2                          films deposited by reactive dc sputtering using Ti-Nb alloy target, precisely controlled in the transition region using impedance feedback system

Nobuto Oka; Yuta Sanno; Junjun Jia; Shin Ichi Nakamura; Yuzo Shigesato

doi:10.1016/j.apsusc.2014.02.126

Transparent conductive Nb-doped TiO ₂ films deposited by reactive dc sputtering using Ti-Nb alloy target, precisely controlled in the transition region using impedance feedback system

Nobuto Oka, Yuta Sanno, Junjun Jia, Shin Ichi Nakamura, Yuzo Shigesato

研究成果: Article › 査読

19 被引用数 (Scopus)

抄録

In this study, a stable reactive sputtering process using a Ti-Nb alloy target was achieved by applying a plasma impedance feedback system. High-quality transparent conductive Nb-doped TiO ₂ (Nb:TiO ₂ ) films were fabricated with high reproducibility. The films were deposited on unheated substrate and subsequently annealed at 873 K under vacuum conditions (below 6.0 × 10 ^-4 Pa) for 1 h. During reactive sputtering, the feedback system precisely controlled the oxidation of the target surface in the so-called transition region. The post-annealing process yielded polycrystalline Nb:TiO ₂ films whose lattice defects decreased with increasing Nb concentration. An extremely low resistivity (7.2 × 10 ^-4 Ω cm) was achieved for Nb:TiO ₂ film with 60-70% transmittance in the visible region. The reactive sputtering using Ti-Nb alloys is considered to be a strong candidate for industrial-scale thin-film deposition. Furthermore, it can also control the metal-oxygen stoichiometry of Nb:TiO ₂ films precisely to achieve desirable properties for each industrial application.

本文言語	English
ページ（範囲）	551-556
ページ数	6
ジャーナル	Applied Surface Science
巻	301
DOI	https://doi.org/10.1016/j.apsusc.2014.02.126
出版ステータス	Published - 2014 5 15
外部発表	はい

ASJC Scopus subject areas

化学 (全般)
凝縮系物理学
物理学および天文学（全般）
表面および界面
表面、皮膜および薄膜

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10.1016/j.apsusc.2014.02.126

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引用スタイル

Oka, N., Sanno, Y., Jia, J., Nakamura, S. I., & Shigesato, Y. (2014). Transparent conductive Nb-doped TiO ₂ films deposited by reactive dc sputtering using Ti-Nb alloy target, precisely controlled in the transition region using impedance feedback system Applied Surface Science, 301, 551-556. https://doi.org/10.1016/j.apsusc.2014.02.126

Transparent conductive Nb-doped TiO ₂ films deposited by reactive dc sputtering using Ti-Nb alloy target, precisely controlled in the transition region using impedance feedback system . / Oka, Nobuto; Sanno, Yuta; Jia, Junjun; Nakamura, Shin Ichi; Shigesato, Yuzo.

In: Applied Surface Science, Vol. 301, 15.05.2014, p. 551-556.

研究成果: Article › 査読

Oka, N, Sanno, Y, Jia, J, Nakamura, SI & Shigesato, Y 2014, ' Transparent conductive Nb-doped TiO ₂ films deposited by reactive dc sputtering using Ti-Nb alloy target, precisely controlled in the transition region using impedance feedback system ', Applied Surface Science, vol. 301, pp. 551-556. https://doi.org/10.1016/j.apsusc.2014.02.126

Oka N, Sanno Y, Jia J, Nakamura SI, Shigesato Y. Transparent conductive Nb-doped TiO ₂ films deposited by reactive dc sputtering using Ti-Nb alloy target, precisely controlled in the transition region using impedance feedback system Applied Surface Science. 2014 5 15;301:551-556. https://doi.org/10.1016/j.apsusc.2014.02.126

Oka, Nobuto ; Sanno, Yuta ; Jia, Junjun ; Nakamura, Shin Ichi ; Shigesato, Yuzo. / Transparent conductive Nb-doped TiO ₂ films deposited by reactive dc sputtering using Ti-Nb alloy target, precisely controlled in the transition region using impedance feedback system In: Applied Surface Science. 2014 ; Vol. 301. pp. 551-556.

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title = " Transparent conductive Nb-doped TiO 2 films deposited by reactive dc sputtering using Ti-Nb alloy target, precisely controlled in the transition region using impedance feedback system ",

abstract = " In this study, a stable reactive sputtering process using a Ti-Nb alloy target was achieved by applying a plasma impedance feedback system. High-quality transparent conductive Nb-doped TiO 2 (Nb:TiO 2 ) films were fabricated with high reproducibility. The films were deposited on unheated substrate and subsequently annealed at 873 K under vacuum conditions (below 6.0 × 10 -4 Pa) for 1 h. During reactive sputtering, the feedback system precisely controlled the oxidation of the target surface in the so-called transition region. The post-annealing process yielded polycrystalline Nb:TiO 2 films whose lattice defects decreased with increasing Nb concentration. An extremely low resistivity (7.2 × 10 -4 Ω cm) was achieved for Nb:TiO 2 film with 60-70% transmittance in the visible region. The reactive sputtering using Ti-Nb alloys is considered to be a strong candidate for industrial-scale thin-film deposition. Furthermore, it can also control the metal-oxygen stoichiometry of Nb:TiO 2 films precisely to achieve desirable properties for each industrial application.",

keywords = "Orientation, Reactive sputtering, Thin films, Ti-Nb alloy target",

author = "Nobuto Oka and Yuta Sanno and Junjun Jia and Nakamura, {Shin Ichi} and Yuzo Shigesato",

note = "Funding Information: The authors would like to thank Dr. Katsuhiko Inaba and Mr. Takayuki Konya of Rigaku Corporation for the out-of-plane and in-plane precise XRD measurements and the film density analysis. This work was partially supported by a High-Tech Research Center project for private universities with matching fund subsidy from the Ministry of Education, Culture, Sports, Science and Technology ( MEXT ) of the Japanese Government.",

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AU - Nakamura, Shin Ichi

AU - Shigesato, Yuzo

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PY - 2014/5/15

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N2 - In this study, a stable reactive sputtering process using a Ti-Nb alloy target was achieved by applying a plasma impedance feedback system. High-quality transparent conductive Nb-doped TiO 2 (Nb:TiO 2 ) films were fabricated with high reproducibility. The films were deposited on unheated substrate and subsequently annealed at 873 K under vacuum conditions (below 6.0 × 10 -4 Pa) for 1 h. During reactive sputtering, the feedback system precisely controlled the oxidation of the target surface in the so-called transition region. The post-annealing process yielded polycrystalline Nb:TiO 2 films whose lattice defects decreased with increasing Nb concentration. An extremely low resistivity (7.2 × 10 -4 Ω cm) was achieved for Nb:TiO 2 film with 60-70% transmittance in the visible region. The reactive sputtering using Ti-Nb alloys is considered to be a strong candidate for industrial-scale thin-film deposition. Furthermore, it can also control the metal-oxygen stoichiometry of Nb:TiO 2 films precisely to achieve desirable properties for each industrial application.

AB - In this study, a stable reactive sputtering process using a Ti-Nb alloy target was achieved by applying a plasma impedance feedback system. High-quality transparent conductive Nb-doped TiO 2 (Nb:TiO 2 ) films were fabricated with high reproducibility. The films were deposited on unheated substrate and subsequently annealed at 873 K under vacuum conditions (below 6.0 × 10 -4 Pa) for 1 h. During reactive sputtering, the feedback system precisely controlled the oxidation of the target surface in the so-called transition region. The post-annealing process yielded polycrystalline Nb:TiO 2 films whose lattice defects decreased with increasing Nb concentration. An extremely low resistivity (7.2 × 10 -4 Ω cm) was achieved for Nb:TiO 2 film with 60-70% transmittance in the visible region. The reactive sputtering using Ti-Nb alloys is considered to be a strong candidate for industrial-scale thin-film deposition. Furthermore, it can also control the metal-oxygen stoichiometry of Nb:TiO 2 films precisely to achieve desirable properties for each industrial application.

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