抄録
The transport characteristics of electrons in weak short-period of 50 nm two-dimensional potential arrays were reported. The electrons were formed on a back-gated undoped GaAs/AlGaAs heterostructure with a shallow channel. The back-gated undoped system helped to control the electron density over a wide range. Also the condition of unit cell being filled by one electron was achieved. A strong Coulomb interaction between the electrons confined in the potential arrays was reflected by the feature determined by the electron density.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 427-429 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 79 |
| 号 | 3 |
| DOI | |
| 出版ステータス | Published - 2001 7月 16 |
ASJC Scopus subject areas
- 物理学および天文学（その他）