The transport characteristics of electrons in weak short-period of 50 nm two-dimensional potential arrays were reported. The electrons were formed on a back-gated undoped GaAs/AlGaAs heterostructure with a shallow channel. The back-gated undoped system helped to control the electron density over a wide range. Also the condition of unit cell being filled by one electron was achieved. A strong Coulomb interaction between the electrons confined in the potential arrays was reflected by the feature determined by the electron density.
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