TRANSVERSE MODEL CONTROLLED InGaAsP/InP LASERS AT 1. 5 mu m RANGE WITH BUFFER-LAYER LOADED PLANO-CONVEX WAVEGUIDE (BL-PCW) STRUCTURES.

Kazuo Sakai, Fujio Tanaka, Yukio Noda, Yuichi Matsushima, Shigeyuki Akiba, Takaya Yamamoto

研究成果: Article査読

16 被引用数 (Scopus)

抄録

A modified plano-convex waveguide structure is studied analytically and successfully applied to InGaAsP/InP lasers in the 1. 5-1. 6 mu m wavelength region to realize stable transverse mode operation. The structure of these lasers is characterized by a standard buffer layer between an active layer and an upper cladding layer and a waveguide layer of varying thickness between the active layer and the substrate. A theoretical analysis of this structure shows that, for a given channel depth, increases in buffer-layer thickness give rise to larger maximum channel widths of the substrate for fundamental transverse mode operation.

本文言語English
ページ(範囲)1245-1250
ページ数6
ジャーナルIEEE Journal of Quantum Electronics
QE-17
7
出版ステータスPublished - 1981 7
外部発表はい

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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