Triode-type basic display structure using Si-doped AlN field emitters

Yashitaka Taniyasu*, Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

*この研究の対応する著者

研究成果査読

8 被引用数 (Scopus)

抄録

We fabricated a basic triode-type field emission display (FED) structure by using heavily Si-doped AlN and demonstrated its action. The FED consisted of the heavily Si-doped AlN field emitter, mesh grid, and phosphor-coated anode screen. We used the grid voltage to control the emission current. This device exhibited an emission current of 2 μA for an electric field of 23 V/μm, and luminescence from the phosphor excited by the field-emitted electrons was observed. The brightness of the luminescence increased as the grid voltage was increased, and it was uniform over the entire field-emission area.

本文言語English
ページ(範囲)199-201
ページ数3
ジャーナルPhysica Status Solidi (A) Applied Research
200
1
DOI
出版ステータスPublished - 2003 11 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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