TY - JOUR
T1 - Tunable monolithic DWDM band-selection interleaver filter switch on silicon-on-insulator substrate
AU - Wu, Zhigang
AU - Honda, Soichiro
AU - Matsui, Junya
AU - Utaka, Katsuyuki
AU - Edura, Tomohiko
AU - Tokuda, Masahide
AU - Tsutsui, Ken
AU - Wada, Wada
N1 - Funding Information:
Manuscript received October 31, 2007; revised February 19, 2008. Current version published December 19, 2008. This work was supported in part by the Ministry of Education, Culture, Sports, Science and Technology under Grant-in-Aid 19023010 for Scientific Research on Priority Areas.
PY - 2008/10/1
Y1 - 2008/10/1
N2 - A tunable band-selection interleaver filter switch formed on a silicon-on-insulator (SOI) substrate for dense wavelength-division-multiplexing (DWDM) system was fabricated, and its fundamental performances were experimentally demonstrated. The device consists of monolithic integration of a Michelson interferometer (MI) structure with two arm-waveguides with different lengths, appropriately designed for ITU-grid separation, a phase-modulation electrode on one arm and tunable wideband Bragg gratings reflectors. An SOI rib waveguide structure with a medium mode size was adopted for low loss and easy fabrication. A bandwidth of the grating, formed by electron beam (EB) lithography and deep reactive-ion etching (Deep-RIE), was rather large of 4 nm at -10 dB transmission level, from which a large coupling coefficient of the Bragg grating of 105 cm-1 was evaluated. A large tuning range of the Bragg grating of 17 nm was obtained. An extinction ratio of the interleaver filter was about 18 dB, and the interleaving switching was also attained with an applied electric power of 50 mW and a switching speed of about 1 ms.
AB - A tunable band-selection interleaver filter switch formed on a silicon-on-insulator (SOI) substrate for dense wavelength-division-multiplexing (DWDM) system was fabricated, and its fundamental performances were experimentally demonstrated. The device consists of monolithic integration of a Michelson interferometer (MI) structure with two arm-waveguides with different lengths, appropriately designed for ITU-grid separation, a phase-modulation electrode on one arm and tunable wideband Bragg gratings reflectors. An SOI rib waveguide structure with a medium mode size was adopted for low loss and easy fabrication. A bandwidth of the grating, formed by electron beam (EB) lithography and deep reactive-ion etching (Deep-RIE), was rather large of 4 nm at -10 dB transmission level, from which a large coupling coefficient of the Bragg grating of 105 cm-1 was evaluated. A large tuning range of the Bragg grating of 17 nm was obtained. An extinction ratio of the interleaver filter was about 18 dB, and the interleaving switching was also attained with an applied electric power of 50 mW and a switching speed of about 1 ms.
KW - Bragg reflector
KW - Dense wavelength-division-multiplexing (DWDM)
KW - Interleaver filter
KW - Michelson interferometer
KW - Silicon-on-insulator waveguide
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U2 - 10.1109/JLT.2008.925688
DO - 10.1109/JLT.2008.925688
M3 - Article
AN - SCOPUS:60149097992
SN - 0733-8724
VL - 26
SP - 3363
EP - 3368
JO - Journal of Lightwave Technology
JF - Journal of Lightwave Technology
IS - 19
ER -